NTE2530 (NPN) & NTE2531 (PNP)
Silicon Complementary Transistors
High Voltage Driver
Features:
D
High Current Capacity: I
C
= 2A
D
High Breakdown Voltage: V
CEO
= 400V Min
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Power Dissipation, P
C
T
A
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain鈥揃andwidth Product
NTE2530
NTE2531
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
V
CE(sat)
V
BE(sat)
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
Symbol
I
CBO
I
EBO
h
FE
f
T
Test Conditions
V
CB
= 300V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 10V, I
C
= 100mA
V
CE
= 10V, I
C
= 100mA
Min
鈥?/div>
鈥?/div>
40
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
400
400
5
Typ
鈥?/div>
鈥?/div>
鈥?/div>
60
40
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max Unit
1.0
1.0
200
鈥?/div>
鈥?/div>
1.0
1.0
鈥?/div>
鈥?/div>
鈥?/div>
MHz
MHz
V
V
V
V
V
碌A(chǔ)
碌A(chǔ)
V
(BR)CBO
I
C
= 10碌A(chǔ), I
E
= 0
V
(BR)CEO
I
C
= 1mA, R
BE
=
鈭?/div>
V
(BR)EBO
I
E
= 10碌A(chǔ), I
C
= 0
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