NTE2504
Silicon NPN Transistor
High Gain Audio Amplifier
Features:
D
Large Current Capacity (I
C
= 2A)
D
Adoption of MBIT Process
D
High DC Current Gain: h
FE
= 800 to 3200
D
Low Collector鈥揈mitter Saturation Voltage: V
CE(sat)
<
0.5V
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain鈥揃andwidth Product
Output Capacitance
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Collector鈥揃ase Breakdown Voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
V
CE(sat)
V
BE(sat)
Test Conditions
V
CB
= 20V, I
E
= 0
V
EB
= 10V, I
C
= 0
V
CE
= 5V, I
C
= 500mA
V
CE
= 10V, I
C
= 50mA
V
CE
= 10V, f = 1MHz
I
C
= 1A, I
B
= 20mA
I
C
= 1A, I
B
= 20mA
Min
鈥?/div>
鈥?/div>
800
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
30
Typ
鈥?/div>
鈥?/div>
Max
0.1
0.1
Unit
碌A(chǔ)
碌A(chǔ)
MHz
pF
V
V
V
1500 3200
260
27
0.15
0.85
鈥?/div>
鈥?/div>
鈥?/div>
0.5
1.2
鈥?/div>
V
(BR)CBO
I
C
= 10A, I
E
= 0
NTE2504 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
1
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