NTE2503
Silicon NPN Transistor
High Gain Switch
Features:
D
High DC Current Gain
D
High Current Capacity
D
Low Collector鈥揈mitter Saturation Voltage
D
High Emitter鈥揃ase Voltage
Applications:
D
AF Amplifier
D
Various Driver
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain鈥揃andwidth Product
Output Capacitance
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Test Conditions
V
CB
= 20V, I
E
= 0
V
EB
= 10V, I
C
= 0
I
C
= 50mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 50mA, V
CE
= 10V
V
CB
= 10V, f = 1MHz
Min
鈥?/div>
鈥?/div>
600
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
270
9
Max
0.1
0.1
鈥?/div>
鈥?/div>
鈥?/div>
MHz
pF
Unit
碌A(chǔ)
碌A(chǔ)
800 1500 3200
NTE2503 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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