NTE243 (NPN) & NTE244 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general鈥損urpose amplifier and low鈥揻requency switching applications.
Features:
D
High DC Current Gain: h
FE
= 3000 Typ @ I
C
= 4A
D
Collector鈥揈mitter Sustaining Voltage: V
CEO(sus)
= 80V Min @ 100mA
D
Low Collector鈥揈mitter Saturation Voltage:
V
CE(sat)
= 2V Max @ I
C
= 4A
= 3V Max @ I
C
= 8A
D
Monolithic Construction with Built鈥揑n Base鈥揈mitter Shunt Resistors
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector鈥揃ase Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter鈥揃ase Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA
Total Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.571W/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.78擄C/W
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter SustainingVoltage
Collector Cutoff Current
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
I
CEO
I
CEX
Emitter Cutoff Current
I
EBO
V
CE
= 40V, I
E
= 0
V
CE
= 80V, V
BE(off)
= 1.5V
V
CE
= 80V, V
BE(off)
= 1.5V, T
A
= +150擄C
V
BE
= 5V, I
C
= 0
80
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.5
0.5
5.0
2.0
V
mA
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max Unit
Note 1. Pulse Test: Pulse Width = 300碌s, Duty Cycle = 2%
NTE243 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細信息
1
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