NTE2430
Silicon NPN Transistor
High Voltage Amp/Switch
(Compl to NTE2431)
Description:
The NTE2430 is a silicon NPN transistor in a SOT鈥?9 type surface mount package designed for use
in amplifier and switching switching applications.
Absolute Maximum Ratings:
Collector鈥揃ase Voltage (Open Emitter), V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector鈥揈mitter Voltage (Open Base), V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
Emitter鈥揃ase Voltage (Open Collector), V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
DC Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (T
A
鈮?/div>
+25擄C, Note 1), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient (Note 1), R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
Note 1. Device mounted on a ceramic substrate; area = 2.5cm
2
, thickness = 0.7mm.
Electrical Characteristics:
(T
J
= +25擄C unles otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
DC Current Gain
Collector Capacitance
Transitional Frequency
Symbol
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
c
f
T
Test Conditions
V
CE
= 300V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 50mA, I
B
= 4mA
I
C
= 50mA, I
B
= 4mA
V
CE
= 10V, I
C
= 20mA
I
E
= I
e
= 0, V
CB
= 10, f = 1MHz
V
CE
= 10V, I
C
= 10mA, f = 5MHz
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
40
鈥?/div>
70
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
20
10
500
1.3
鈥?/div>
2
鈥?/div>
Unit
nA
碌A(chǔ)
mV
V
pF
MHz
NTE2430 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
1
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