NTE2428 (NPN) & NTE2429 (PNP)
Silicon Complementary Transistors
General Purpose Switch
Description:
The NTE2428 and NTE2429 are silicon complementary transistors in a SOT鈥?9 type surface mount
package designed for use in thick and thin film circuits. Typical applications include telephone and
general industrial.
Absolute Maximum Ratings:
Collector鈥揃ase Voltage (Open Emitter), V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector鈥揈mitter Voltage, V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter鈥揃ase Voltage (Open Collector), V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
DC Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
DC Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (T
A
鈮?/div>
+25擄C, Note 1), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient (Note 1), R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
Thermal Resistance, Junction鈥搕o鈥揟ab, R
thJTAB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W
Note 1. Device mounted on a ceramic substrate; area = 2.5cm
2
, thickness = 0.7mm.
Electrical Characteristics:
(T
J
= +25擄C unles otherwise specified)
Parameter
Collector Cutoff Current
Symbol
I
CBO
Test Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
J
= +150擄C
Min
鈥?/div>
Typ
鈥?/div>
Max
100
50
鈥?/div>
鈥?/div>
鈥?/div>
250
500
1.0
1.2
Unit
nA
碌A(chǔ)
V
V
V
mV
mV
V
V
鈥?/div>
80
90
5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Collector鈥揈mitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0
V
(BR)CES
I
C
= 10碌A(chǔ), V
BE
= 0
V
(BR)EBO
I
E
= 10碌A(chǔ), I
C
= 0
V
CE(sat)
V
BE(sat)
I
C
= 150mA, I
B
= 15mA, Note 2
I
C
= 500mA, I
B
= 50mA, Note 2
I
C
= 150mA, I
B
= 15mA, Note 2
I
C
= 500mA, I
B
= 50mA, Note 2
Emitter鈥揃ase Breakdown Voltage
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Note 2. Measured under pulsed conditions.
NTE2428 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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