NTE2426 (NPN) & NTE2427 (PNP)
Silicon Complementary Transistors
Darlington Switch
Description:
The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT鈥?9 type surface mount
package designed for use in industrial switching applications such as print hammer, solenoid, relay,
and lamp drivers.
Absolute Maximum Ratings:
Collector鈥揃ase Voltage (Open Emitter), V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector鈥揈mitter Voltage, V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter鈥揃ase Voltage (Open Collector), V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (T
A
鈮?/div>
+25擄C, Note 1), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature (Note 2), T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient (Note 1, Note 2), R
thJA
. . . . . . . . . . . . . . . . . . . . 125K/W
Thermal Resistance, Junction鈥搕o鈥揟ab (Note 2), R
thJTAB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W
Note 1. Device mounted on a ceramic substrate; area = 2.5cm
2
, thickness = 0.7mm.
Note 2. Based on maximum average junction temperature in line with common industrial practice.
The resulting higher junction teperature of the output transistor part is taken into account.
Electrical Characteristics:
(T
J
= +25擄C unles otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CES
I
EBO
h
FE
Test Conditions
V
CER
= 80V, V
BE
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 10V, I
C
= 150mA, Note 3
V
CE
= 10V, I
C
= 500mA, Note 3
Min
鈥?/div>
鈥?/div>
1000
2000
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
10
10
鈥?/div>
鈥?/div>
Unit
碌A(chǔ)
碌A(chǔ)
Note 3. Measured under pulsed conditions.
NTE2426 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
NTE2426相關(guān)型號PDF文件下載
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