NTE2412
Silicon NPN Transistor
General Purpose, High Voltage Amp,
(Compl to NTE2413)
Description:
The NTE2412 is a silicon NPN transistor in an SOT鈥?3 type surface mount package designed for use
primarily in telephone and professional communication equipment.
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector鈥揈mitter Saturation Voltage
DC Current Gain
Transition Frequency
Capacitance
Symbol
Test Conditions
Min
300
300
5
鈥?/div>
鈥?/div>
鈥?/div>
56
50
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
3
Max
鈥?/div>
鈥?/div>
鈥?/div>
0.5
0.5
2.0
120
鈥?/div>
鈥?/div>
MHz
pF
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
(BR)CBO
I
C
= 50碌A(chǔ)
V
(BR)EBO
I
E
= 50碌A(chǔ)
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
V
CB
= 200V
V
EB
= 4V
I
C
= 50mA, I
B
= 5mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 30V, I
E
= 10mA,
f = 100MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
Collector鈥揈mitter Breakdown Voltage V
(BR)CEO
I
C
= 100碌A(chǔ)
NTE2412相關(guān)型號PDF文件下載
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