NTE2410
Silicon NPN Transistor
High Voltage Amp/Driver
(Comp to NTE2411)
Description:
The NTE2410 is a silicon NPN transistor in an SOT鈥?3 type surface mount case designed for use
in high voltage applications.
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Power Dissipation (T
A
= +25擄C, FR鈥? Board, Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556擄C/mW
Total Power Dissipation (T
A
= +25擄C, Alumina Substrate, Note 2), P
D
. . . . . . . . . . . . . . . . . 300mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 417擄C/mW
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. FR鈥? = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
V
(BR)CEO
I
C
= 1mA, I
B
= 0, Note 3
V
(BR)CBO
I
C
= 100碌A(chǔ), I
E
= 0
V
(BR)EBO
I
E
= 10碌A(chǔ), I
C
= 0
I
CBO
I
EBO
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= +100擄C
Emitter Cutoff Current
V
EB
= 4V, I
C
= 0
160
180
6
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
50
50
V
V
V
nA
碌A(chǔ)
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 3. Pulse Test: Pulse Width = 300碌s, Duty Cycle = 2%.
NTE2410 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
2
NTE2410相關(guān)型號(hào)PDF文件下載
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