NTE2407
Silicon PNP Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2406)
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (FR鈥? Board, Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate above +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient (FR鈥? Board, Note 1), R
thJA
. . . . . . . . . . . . . . 556擄C/W
Total Device Dissipation (Alumina Substrate, Note 2), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient (Alumina Substrate, Note 2), R
thJA
. . . . . . . . 417擄C/W
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5
擄
to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5
擄
to +150擄C
Note 1. FR鈥? = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
Base Current
I
B
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 10mA, I
B
= 0, Note 3
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 50V, I
E
= 0
V
CB
= 50V, I
E
= 0, T
A
= +125擄C
V
CE
= 30V, V
EB(off)
= 0.5V
V
CE
= 30V, V
EB(off)
= 0.5V
60
60
5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.01
10
50
50
V
V
V
碌A(chǔ)
碌A(chǔ)
nA
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 3. Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
next
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