NTE2404 (NPN) & NTE2405 (PNP)
Silicon Complementary Transistors
Darlington, General Purpose
Description:
The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an
SOT鈥?3 type surface mount case designed for general鈥損urpose applications.
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (T
A
= +25擄C, Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction to Ambient (Note 1), R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 350K/W
Note 1. Mounted on a ceramic substrate of .590 (15mm) x .590 (15mm) x .027 (0.7mm).
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揃ase Current
Emitter鈥揃ase Current
Collector鈥揈mitter Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
DC Current Gain
Symbol
I
CBO
I
EBO
Test Conditions
V
CBO
= 30V
V
EB
= 10V
Min
鈥?/div>
鈥?/div>
30
40
10
鈥?/div>
鈥?/div>
4000
10000
20000
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
220
3.5
Max
100
100
鈥?/div>
鈥?/div>
鈥?/div>
1
1.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
MHz
pF
Unit
nA
nA
V
V
V
V
V
V
(BR)CEO
I
C
= 10mA
V
(BR)CBO
I
C
= 10碌A(chǔ)
V
(BR)EBO
I
E
= 100nA
V
CE(sat)
V
BE(sat)
h
FE
I
C
= 100mA, I
B
= 0.1mA
I
C
= 100mA, I
B
= 0.1mA
I
C
= 1mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 100mA, V
CE
= 5V
Transition Frequency
Collector Capacitance
f
T
C
c
I
C
= 30mA, V
CE
= 5V, f = 100MHz
I
E
= 0, V
CB
= 30V
NTE2404 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
2
NTE2404相關(guān)型號(hào)PDF文件下載
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