NTE2402 (NPN) & NTE2403 (PNP)
Silicon Complementary Transistors
Low Noise, UHF/VHF Amplifier
Description:
The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT鈥?3 type
surface mount package designed for use in UHF and microwave amplifiers in thick and thin鈥揻ilm cir-
cuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These tran-
sistors feature low intermodulation distortion and high power gain. Due to very high transition fre-
quency, these devices also have excellent wideband properties and low noise up to high frequencies.
Absolute Maximum Ratings:
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V
DC Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Total Power Dissipation (T
A
鈮?/div>
+60擄C, Note 1), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient (Note 1), R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics:
(T
J
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
DC Current Gain
Transition Frequency
Collector Capacitance
Emitter Capacitance
Feedback Capacitance
Symbol
I
CBO
h
FE
f
T
C
c
C
e
C
re
Test Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
C
= 14mA
V
CE
= 10V, I
C
= 14mA, f = 500MHz
V
CB
= 10V, I
E
= Ie = 0, f = 1MHz
V
EB
= 0.5V, I
C
= I
c
= 0, f = 1MHz
V
CE
= 10V, I
C
= 2mA, f = 1MHz,
T
A
= +25擄C
Min
1
2
