NTE2401
Silicon PNP Transistor
RF Stages in FM Front Ends
Description:
The NTE2401 is a silicon PNP transistor in a plastic SOT鈥?3 type surface mount package designed
for use in RF stages in FM front鈥揺nds in common base configuration for SMD applications.
Absolute Maximum Ratings:
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
DC Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Total Power Dissipation (T
A
鈮?/div>
+25擄C, Note 1), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient (Note 1), R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics:
(T
J
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitterr Cutoff Current
Base Current
Base鈥揈mitter Voltage
Transition Frequency
Symbol
I
CBO
I
EBO
I
B
V
BE
f
T
Test Conditions
V
CB
= 30V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 10V, I
C
= 4mA
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 4mA
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 4mA
V
CE
= 10V, I
C
= 8mA
Feedback Capacitance
Noise Factor
C
rb
F
V
CE
= 10V, V
EB
= 0
V
CE
= 10V, I
C
= 2mA, G
s
= 16.7mS
V
CE
= 10V, I
C
= 5mA, G
s
= 6.7mS,
jB
s
= 5mS
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
80
22
0.76
350
450
440
0.1
3.0
3.5
Max
50
10
160
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Unit
nA
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
MHz
MHz
MHz
pF
dB
dB
next
NTE2401 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
2
PKG/2
NTE2401相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Silicon Complementary Transistors High Power, Low Collector ...
NTE
-
英文版
Silicon Complementary Transistors General Purpose Output & D...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 75V; Transistor Polarity:NPN; Colle...
NTE Electronics
-
英文版
Silicon Complementary Transistors General Purpose Output & D...
NTE
-
英文版
Germanium PNP Transistor High Power, High Gain Amplifier
NTE
-
英文版
Silicon NPN Transistor Darlington Driver
NTE
-
英文版
Silicon NPN Transistor Darlington Driver
NTE
-
英文版
Silicon NPN Transistor High Speed Switch, Core Driver
NTE
-
英文版
Silicon PNP Transistor Audio Power Output
NTE
-
英文版
Transistor; PNP; 80 V; 80 V; 7 V; 4 A (Continuous), 10 A (Pe...
NTE Electronics
-
英文版
POWER TRANSISTOR, PNP, -60V, TO-3; Transistor Polarity:PNP; ...
NTE Electronics
-
英文版
MOSFET Dual Gate, N-Channel for VHF TV Receivers Application...
NTE
-
英文版
Field Effect Transistor Dual Gate N-Channel MOSFET
NTE
-
英文版
MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain...
NTE Electronics
-
英文版
Silicon NPN Transistor Final RF Power Output for CB PO = 4W,...
NTE
-
英文版
Silicon NPN Transistor Linear Amplifier and High Speed Switc...
NTE
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE
-
英文版
Silicon NPN Transistor High Voltage Amp, Video Output
NTE
-
英文版
Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp
NTE
-
英文版
Silicon Controlled Rectifier (SCR) TV Deflection Circuit
NTE