NTE2392
MOSFET
N鈥揅hannel Enhancement Mode,
High Speed Switch
Description:
The NTE2392 is an N鈥揅hannel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D
Fast Switching
D
Low Drive Current
D
Ease of Paralleling
D
No Second Breakdown
D
Excellent Temperature Stability
Absolute Maximum Ratings:
Drain鈥揝ource Voltage (Note 1), V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain鈥揋ate Voltage (R
GS
= 20k鈩? Note 1), V
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Gate鈥揝ource Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵20V
Pulsed Drain Current (Note 3), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160A
Clamped Inductive Current (L = 100碌H), I
LM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160A
Continuous Drain Current, I
D
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
T
C
= +100擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Total Dissipation (T
C
= +25擄C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case, 10sec), T
L
. . . . . . . . . . +300擄C
Maximum Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83擄C/W
Typical Thermal Resistance, Case鈥搕o鈥揝ink (Note 4), R
thCS
. . . . . . . . . . . . . . . . . . . . . . . . . . 0.1擄C/W
Maximum Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . 30擄C/W
Note
Note
Note
Note
1.
2.
3.
4.
T
J
= +25擄 to +150擄C
Pulse test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2%.
Repetitive Rating: Pulse width limited by maximum junction temperature.
Mounting surface flat, smooth, and greased.
1
2
3
