NTE238
Silicon NPN Transistor
Color TV, Horizontal Output
Description:
The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use
in deflection circuits.
Features:
D
V
CEX
= 1500V
D
Safe Operating Area @ 50碌s = 20A, 400V
Absolute Maximum Ratings;
Collector鈥揈mitter Voltage, V
CEX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter鈥揃ase Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current鈥揅ontinuous, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current鈥揅ontinuous, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Emitter Current鈥揅ontinuous, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Total Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25擄C/W
Maximum Lead Temperature (Soldering Purposes, 1/8鈥?from case for 5sec), T
L
. . . . . . . . . +275擄C
Electrical Characteristics:
(T
C
=+25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
(Note 1)
Collector鈥揈mitter Saturation Voltage
Base Emitter Saturation Voltage
SWITCHING CHARACTERISTICS
Fall Time
t
f
I
C
= 5A, I
B1
= 1A, L
B
= 8碌H
鈥?/div>
0.4
1.0
碌s
V
CE(sat)
V
BE(sat)
I
C
= 5A, I
B
= 1A
I
C
= 5A, I
B
= 1A
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
1.5
V
V
V
CEO(sus)
V
C
= 50mA, I
B
= 0
I
CES
I
EBO
V
CE
= 1500V, V
BE
= 0
V
BE
= 5V, I
C
= 0
750
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.25
0.1
V
mA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse test: Pulse Width
鈮?/div>
300碌s, Duty Cycle = 2%.
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