NTE2389
MOSFET
N鈥揅h, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Drain鈥揝ource Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain鈥揋ate Voltage (R
GS
= 20k鈩?, V
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain Current, I
D
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152A
Gate鈥揝ource Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵30V
Maximum Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175擄C
Storage Temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Maximum Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2擄C/W
Typical Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 60擄C/W
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Static Ratings
Drain鈥揝ource Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate鈥揝ource Leakage Current
Drain鈥揝ource On鈥揝tate Resistance
Dynamic Ratings
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
g
fs
C
iss
C
oss
C
rss
I
D
= 20A, V
DS
= 25V
V
DS
= 25V, V
GS
= 0, f = 1MHz
8
鈥?/div>
鈥?/div>
鈥?/div>
13.5
560
300
鈥?/div>
750
400
mhos
pF
pF
pF
1650 2000
BV
DSS
V
GS(th)
I
DSS
I
GSS
I
D
= 0.25mA, V
GS
= 0
I
D
= 1mA, V
DS
= V
GS
V
DS
= 60V,
V
GS
= 0
T
J
= +25擄C
T
J
= +125擄C
60
2.1
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
3.0
1
0.1
10
40
鈥?/div>
4.0
10
1.0
100
45
V
V
碌A(chǔ)
mA
nA
m鈩?/div>
Symbol
Test Conditions
Min
Typ
Max
Unit
V
GS
=
鹵30V,
V
DS
= 0
R
DS(on)
I
D
= 20A, V
GS
= 10V
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