NTE2384
MOSFET
N鈥揅hannel Enhancement Mode,
High Speed Switch
Absolute Maximum Ratings:
Drain鈥揝ource Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Drain鈥揋ate Voltage (R
GS
= 20k鈩?, V
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Gate鈥揝ource Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵20V
Pulsed Drain Current (T
C
= +25擄C), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A
Continuous Drain Current, I
D
T
C
= +30擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0A
T
C
= +100擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A
Total Dissipation (T
C
= +25擄C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Maximum Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0擄C/W
Typical Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 35擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Static Characteristics
Drain鈥揝ource Breakdown Voltage
Zero鈥揋ate Voltage Drain Current
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30V, I
D
= 2.6A, V
GS
= 10V,
R
GS
= 50鈩? R
gen
= 50鈩?/div>
鈩?/div>
鈩?/div>
I
D
= 250碌A(chǔ), V
GS
= 0
V
GS
= 0, V
DS
= 800V, T
J
= +25擄C
V
GS
= 0, V
DS
= 800V, T
J
= +125擄C
Gate鈥揃ody Leakage Current
Gate Threshold Voltage
Static Drain鈥揝ource On Resistance
Dynamic Characteristics
Forward Transconductance
Input Capactiance
Output Capacitance
Reverse Transfer Capactiance
Turn鈥揙n Time
Rise Time
Turn鈥揙ff Delay Time
Fall Time
V
DS
= 25V, I
D
= 3A
V
DS
= 25V, V
GS
= 0, f = 1MHz
1.8
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
3.0
3900
200
80
60
90
330
110
鈥?/div>
5000
350
140
90
140
430
140
mho
pf
pf
pf
ns
ns
ns
ns
V
DS
= 0, V
GS
=
鹵20V
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
800
鈥?/div>
鈥?/div>
鈥?/div>
2.1
鈥?/div>
鈥?/div>
20
0.1
10
3.0
1.3
鈥?/div>
250
1.0
100
4.0
1.5
V
碌A(chǔ)
mA
nA
V
Symbol
Test Conditions
Min
Typ
Max
Unit
鈩?/div>
next
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