NTE2377
MOSFET
N鈥揅hannel,
Enhancement Mode, High Speed
Description:
The NTE2377 is an N鈥揅hannel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D
Low ON鈥揝tate Resistance
D
Very High鈥揝peed Switching
D
Converters
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Drain鈥揝ource Voltage, V
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate鈥揝ource Voltage, V
GSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵30V
DC Drain Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Pulsed Drain Current (Note 1), I
DP
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Allowable Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Maximum Channel Temperature, T
ch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. Pulse Width
鈮?/div>
10碌s, Duty Cycle
鈮?/div>
1%.
Note 2. Be careful in handling the NTE2377 because it has no protection diode between gate and
source.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Drain鈥揝ource Breakdown Voltage
Zero鈥揋ate Voltage Drain Current
Gate鈥揝ource Leakage Current
Cutoff Voltage
Static Drain鈥揝ource On Resistance
Forward Transconductance
Symbol
Test Conditions
Min
900
鈥?/div>
鈥?/div>
2
鈥?/div>
2.5
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.2
5.0
Max
鈥?/div>
1.0
鹵100
3
1.6
鈥?/div>
Unit
V
mA
nA
V
鈩?/div>
mho
V
(BR)DSS
I
D
= 1mA, V
GS
= 0
I
DSS
I
GSS
V
GS(off)
R
DS(on)
g
fs
V
GS
= 0, V
DS
= Max Rating
V
DS
= 0, V
GS
=
鹵30V
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 4A
V
DS
= 20V, I
D
= 4A
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