NTE2366
Silicon PNP Transistor
High Voltage Video Amp
(Compl to NTE399)
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Operating Junction Temperature, T
j
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
DC Current Gain
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Current Gain鈥揃andwidth Product
Capacitance
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
Test Conditions
Min
鈥?/div>
鈥?/div>
300
300
5
40
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
150
2.6
1.8
Max
0.1
0.1
鈥?/div>
鈥?/div>
鈥?/div>
320
0.6
1.0
鈥?/div>
鈥?/div>
鈥?/div>
V
V
MHz
pF
pF
Unit
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
碌A(chǔ)
碌A(chǔ)
V
V
V
V
(BR)CBO
I
C
= 10碌A(chǔ), I
E
= 0
V
(BR)CEO
I
C
= 1mA, R
BE
=
鈭?/div>
V
(BR)EBO
I
E
= 10碌A(chǔ), I
C
= 0
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
C
re
V
CE
= 10V, I
C
= 10mA
I
C
= 20mA, I
B
= 2mA
I
C
= 20mA, I
B
= 2mA
V
CE
= 30V, I
C
= 10mA
V
CB
= 30V, f = 1MHz
V
CB
= 30V, f = 1MHz
NTE2366 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
1
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