NTE2349 (NPN) & NTE2350 (PNP)
Silicon Darlington Transistors
High Current, General Purpose
Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3
type package designed for use as output devices in general purpose amplifier applications.
Features:
D
High DC Current Gain:
h
FE
= 1000 (Min) @ I
C
= 25A
h
FE
= 400 (Min) @ I
C
= 50A
D
Diode Protection to Rated I
C
D
Monolithic Construction
w
/Built鈥揑n Base鈥揈mitter Shunt Resistor
D
Junction Temperature to +200擄C
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector鈥揃ase Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter鈥揃ase Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W
Derate Above 25擄C @ T
C
= +100擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71W/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584擄C
Lead Temperature (During Soldering, 10sec Max), T
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275擄C
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
Collector鈥揈mitter Leakage Current
V
(BR)CEO
I
C
= 100mA, I
B
= 0
I
CER
I
CEO
Emitter Cutoff Current
I
EBO
V
CE
= 120V, R
BE
= 1k鈩?/div>
V
CE
= 120V, R
BE
= 1k鈩? T
C
= +150擄C
V
CE
= 50V, I
B
= 0
V
BE
= 5V, I
C
= 0
120
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2
10
2
2
V
mA
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
NTE2349相關(guān)型號(hào)PDF文件下載
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