NTE2340
Silicon NPN Transistor
Darlington Power Amp, Switch
Features:
D
60V Zener Diode Built鈥揑n Between Collector and Base
D
Very Small Fluctuation in Breakdown Voltages
D
Large Energy Handling Capability
D
High Speed Switching
Absolute Maximum Ratings:
(T
C
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
鹵10V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
鹵10V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation, P
C
T
A
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Collector Cut鈥揙ff Current
Emitter Cut鈥揙ff Current
DC Current Gain
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Transition Frequency
Turn鈥揙n Time
Storage Time
Fall Time
Energy Handling Capability
Symbol
I
CBO
I
EBO
h
FE (1)
h
FE (2)
V
BE(sat)
f
T
t
on
t
stg
t
f
E
s/b
I
C
= 1A, L = 100mH,
R
BE
= 100鈩?/div>
Test Conditions
V
CB
= 50V, I
E
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 3V, I
C
= 4A
V
CE
= 3V, I
C
= 8A
I
C
= 4A, I
B
= 8mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
V
CC
= 50V, I
B1
= 鈥揑
B2
= 8mA,
I
C
= 4A
Min
鈥?/div>
鈥?/div>
50
2000
500
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
20
0.5
4.0
1.0
鈥?/div>
Max
100
2
70
5000
鈥?/div>
1.5
2.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
V
MHz
碌s
碌s
碌s
mJ
Unit
碌A(chǔ)
mA
V
Collector鈥揈mitter Breakdown Voltage V
(BR)CEO
I
C
= 5mA, I
B
= 0
V
CE(sat)
I
C
= 4A, I
B
= 8mA
NTE2340 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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