NTE233
Silicon NPN Transistor
Video IF, Oscillator
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (T
A
= +25擄C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/擄C
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 1/16鈥?/div>
鹵1/32鈥?/div>
from case, 10sec), T
L
. . . . . . . . . . . . . . . +230擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
DC Pulse Current Gain
Collector Saturation Voltage
Current Gain鈥揃andwidth Product
Power Gain, Fixed Neutralization
Reverse Transfer Capacitance
Output Admittance, Input Short
Circuit
Symbol
Test Conditions
Min
30
3
鈥?/div>
鈥?/div>
20
鈥?/div>
30
300
25
0.6
30
Typ Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.6
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
1
100
鈥?/div>
鈥?/div>
700
鈥?/div>
1.1
V
V
MHz
dB
pF
Unit
V
V
nA
碌A(chǔ)
V
(BR)CBO
I
C
= 100碌A(chǔ), I
E
= 0
V
(BR)EBO
I
E
= 10碌A(chǔ), I
C
= 0
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
G
pe
C
re
g
oe
V
CB
= 30V, I
E
= 0
V
CE
= 30V, I
B
= 0
I
C
= 10mA, V
CE
= 10V, Note 1
I
C
= 20mA, I
B
= 0.1mA, Note 1
I
C
= 10mA, V
CE
= 10V,
f = 100MHz
I
C
= 10mA, V
CE
= 10V,
f = 45MHz
I
E
= 0, V
CB
= 10V, f
鈮?/div>
1MHz
I
C
= 10mA, V
CE
= 10V,
f = 45MHz
Collector鈥揈mitter Sustaining Voltage V
CEO(sus)
I
C
= 1mA, I
B
= 0, Note 1
200
碌mho
Note 1. Pulse Test: Pulse Width = 300碌s, Duty Cycle = 1%.
NTE233 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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