NTE2336
Silicon NPN Transistor
Darlington Switch
w
/Internal Damper
& Zener Diode
Features:
D
60V Zener Diode Built鈥揑n Between Collector and Base
D
Low Fluctuation in Breakdown Voltages
D
High Energy Handling Capability
D
High Speed Switching
Absolute Maximum Ratings:
(T
C
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
鹵10V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
鹵10V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Collector Power Dissipation (T
A
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Collector鈥揈mitter Voltage
DC Current Gain
Symbol
I
CBO
I
EBO
V
CEO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test Conditions
V
CB
= 50V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 5mA, I
B
= 0
V
CE
= 3V, I
C
= 4A
V
CE
= 3V, I
C
= 8A
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Transition Frequency
I
C
= 4A, I
B
= 8mA
I
C
= 4A, I
B
= 8mA
V
CE
= 10V, I
C
= 500mA, f = 1MHz
Min
鈥?/div>
鈥?/div>
50
2000
500
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
20
Max
100
2
70
5000
鈥?/div>
1.5
2.0
鈥?/div>
V
V
MHz
Unit
碌A(chǔ)
mA
V
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