NTE232
Silicon PNP Transistor
Darlington Amplifier, Preamp
Description:
The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type pack-
age designed for preamplifier input applications where high impedance is a requirement.
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揈mitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Total Power Dissipation (T
A
= +25擄C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/擄C
Total Power Dissipation (T
C
= +25擄C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500mW
Derate above +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/擄C
Operating Junction Temperature range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 1/16鈥?/div>
鹵1/32鈥?/div>
from case, 10sec), T
L
. . . . . . . . . . . . . . . +230擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Static Characteristics
Collector鈥揈mitter Breakdown Voltage V
(BR)CES
I
C
= 100碌A(chǔ), I
B
= 0
Collector Cutoff Current
Emitter Cutoff Current
Forward Current Transfer Ratio
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter ON Voltage
I
CBO
I
EBO
h
FE
V
CB
= 30V, I
E
= 0
V
BE
= 8V, I
C
= 0
I
C
= 10mA, V
CE
= 5V
I
C
= 100mA, V
CE
= 5V
V
CE(sat)
I
C
= 100mA, I
B
= 0.1mA
V
BE(on)
I
C
= 100mA, V
CE
= 5V, Note 1
30
鈥?/div>
鈥?/div>
50k
20k
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.9
鈥?/div>
100
100
鈥?/div>
鈥?/div>
1.5
V
V
V
nA
nA
Symbol
Test Conditions
Min
Typ Max Unit
1.45 2.00
Note 1. Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
next
NTE232 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細信息
1
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