NTE2327
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters,
inverters, switching regulators, motor control systems and switching applications.
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage (V
BE
= 0, Peak value), V
CESM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Collector鈥揈mitter Voltage (Open base), V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Emitter鈥揃ase Voltage (Open Collector), V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A
Peak (t
p
= 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, I
B
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3A
Reverse Base Current (Peak Value, Note 1), 鈥揑
BM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3A
Total Power Dissipation (T
MB
鈮?/div>
+60擄C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揗ounting Base, R
thJMB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5K/W
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W
Note 1. Turn鈥揙ff current.
Electrical Characteristics:
(T
J
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current (Note 2)
Symbol
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
on
t
s
t
f
Test Conditions
V
CEM
= 1000V, V
BE
= 0
V
CEM
= 1000V, V
BE
= 0, T
J
= +125擄C
Emitter Cutoff Current
DC Current Gain
Collector鈥揈mitter Saturation Voltage
I
C
= 0, V
EB
= 5V
I
C
鈥? 50mA, V
CE
= 5V
I
C
= 0.1A, I
B
= 10mA
I
C
= 0.2A, I
B
= 20mA
Base鈥揈mitter Saturation Voltage
Collector鈥揈mitter Sustaining Voltage
Transition Frequency
Turn鈥揙n Time
Storage Time
Fall Time
I
C
= 0.2A, I
B
= 20mA
I
C
= 50mA, V
CE
= 10V, f = 1MHz
I
Con
= 0.2A, V
CC
= 250V,
I
Bon
= 20mA, 鈥揑
Boff
= 40mA
V
CEO(sus)
I
C
= 100mA, I
Boff
= 0, L = 25mH
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
450
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
50
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
20
0.25
2.0
0.4
Max
100
1
1
鈥?/div>
0.8
1.0
1.0
鈥?/div>
鈥?/div>
0.50
3.5
1.3
V
V
V
V
MHz
碌s
碌s
碌s
Unit
碌A
mA
mA
Note 2. Measured with a half sine鈥搘ave voltage.
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