NTE2325
Silicon NPN Transistor
High Voltage Switch
Features:
D
High Reverse Voltage: V
CBO
= 900V (Max)
D
High Speed Switching: t
f
= 0.7碌s (Max)
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak Collector Current (Note 1), i
cp
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
10%
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector鈥揈mitter Sustaining Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CEO(sus)
I
C
= 1mA, I
E
= 0
I
C
= 5mA, R
BE
=
鈭?/div>
I
E
= 1mA, I
C
= 0
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 3A, L = 500碌H, I
B
= 1A
900
800
7
鈥?/div>
鈥?/div>
800
800
900
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
10
鈥?/div>
鈥?/div>
鈥?/div>
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
V
Symbol
Test Conditions
Min
Typ
Max Unit
V
CEX(sus)1
I
C
= 1A, I
B1
= 200mA, I
B2
= 鈥?00mA,
L = 2mH, Clamped
V
CEX(sus)2
I
C
= 500mA, I
B1
= 100mA, I
B2
= 鈥?00mA,
L = 5mH, Clamped
next
NTE2325 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
1
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