NTE231
Silicon Controlled Rectifier (SCR)
TV Deflection Circuit
Features:
D
CTV 110擄 鈥?CRT Horizontal Deflection
D
Comutater Switch
Absolute Maximum Ratings:
Repetitive Peak Off鈥揝tate Voltage (T
J
= +100擄C), V
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Non鈥揜epetitive Peak Forward Voltage (T
J
= +100擄C), V
DSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Repetitive Peak Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
RMS On鈥揝tate Current (Note 1), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Average On鈥揝tate Current (Note 1), I
T(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A
Surge Current (Note 1), I
TSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Critical Rate鈥搊f鈥揜ise of On鈥揝tate Current, di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/碌s
Peak Gate Power Dissipation (Note 2), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Average Gate Power Dissipation, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Minimum Peak Reverse Gate Voltage, V
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0V
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +100擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4擄C/W
Note 1. Single Phase, Half Sine Wave at 50Hz, T
C
= +60擄C
Note 2. 10碌s duration
Electrical Characteristics:
Parameter
Peak Off鈥揝tate Current
Peak On鈥揝tate Voltage
DC Gate Trigger Current
Symbol
I
DRM
V
TM
I
GT
Test Conditions
V
DRM
= 700V, T
J
= +100擄C
I
TM
= 20A, T
C
= +25擄C
T
C
= 鈥?0擄C V
D
= 6V, R
L
= 10鈩?/div>
T
C
= +25擄C
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
1.5
3.0
75
45
Unit
mA
V
mA
mA
NTE231 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
NTE231相關(guān)型號(hào)PDF文件下載
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Silicon Controlled Rectifier (SCR) TV Deflection Circuit
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