NTE2314
Silicon PNP Transistor
High Current, High Speed Switch
(Compl to NTE2304)
Description:
The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay
drivers, high鈥搒peed inverters, converters, and other general high鈥揷urrent switching applications.
Features:
D
Low Collector鈥揈mitter Saturation Voltage
D
Wide ASO and Resistant to Breakdowns
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter鈥揃ase voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Allowable Collector Dissipation (T
C
= +25擄C ), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Ambient Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
Test Conditions
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 8A
Current Gain鈥揃andwidth Product
Collector鈥揈mitter Saturation Voltage
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Turn鈥揙n Time
Storage Time
Fall Time
V
CE
= 5V, I
C
= 1A
I
C
= 8A, I
B
= 0.4A
Min
鈥?/div>
鈥?/div>
100
30
鈥?/div>
鈥?/div>
60
50
6
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
20
0.26
鈥?/div>
鈥?/div>
鈥?/div>
0.2
0.5
0.1
Max
0.1
0.1
200
鈥?/div>
鈥?/div>
0.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
MHz
V
V
V
V
碌s
碌s
碌s
Unit
mA
mA
V
(BR)CBO
I
C
= 1mA, I
E
= 0
V
(BR)CBO
I
C
= 1mA, R
BE
=
鈭?/div>
V
(BR)EBO
I
E
= 1mA, I
C
= 0
t
on
t
stg
t
f
10I
B1
= 鈥?0I
B2
= I
C
= 2A,
PW = 20碌s
碌
NTE2314 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
1
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