NTE225
Silicon NPN Transistor
Linear Amplifier and High Speed Switch
Description:
The NTE225 is a silicon NPN transistor in a TO39 type package (with flange) designed for industrial
and commercial equipment. Typical applications include high voltage differential and operational am-
plifiers, high voltage inverters, and high voltage, low current switching and series regulators.
Features:
D
High Voltage Rating: V
CEO(sus)
= 350V Max.
D
Low Saturation Voltage
Absolute Maximum Ratings:
Collector鈭払ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector鈭扙mitter Sustaining Voltage, V
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
Emitter鈭払ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鈭?5擄
to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鈭?5擄
to +200擄C
Thermal Resistance, Junction鈭抰o鈭扖ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5擄C/W
Lead Temperature (During Soldering, 1/32鈥?from seating plane for 10sec Max, T
L
. . . . . . . +255擄C
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Collector鈭扙mitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector鈭扙mitter Saturation Voltage
Base鈭扙mitter Saturation Voltage
Small鈭扴ignal Current Gain
Output Capacitance
Second Breakdown Collector Current
Symbol
I
CEO
I
CEV
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
h
fe
C
ob
I
S/b
Test Conditions
V
CE
= 300V, I
B
= 0
V
CE
= 450V, V
BE
=
鈭?.5V
V
BE
= 6V, I
C
= 0
V
CE
= 10V, I
C
= 20mA
V
CE
= 10V, I
C
= 2mA
I
C
= 50mA, I
B
= 4mA
I
C
= 50mA, I
B
= 4mA
V
CE
= 10V, I
C
= 10mA, f = 5MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 200V, with Base Forward Biased
Min
350
鈭?/div>
鈭?/div>
鈭?/div>
40
30
鈭?/div>
鈭?/div>
3
鈭?/div>
50
Typ
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Max
鈭?/div>
20
500
20
160
鈭?/div>
0.5
1.3
鈭?/div>
10
鈭?/div>
pF
mA
V
V
Unit
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
CEO(sus)
I
C
= 50mA, I
B
= 0, Base Open, Note 1
Note 1. The sustaining voltage (V
CEO(sus)
)
MUST NOT
be measured on a curve tracer.
NTE225 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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