NTE224
Silicon NPN Transistor
Final RF Power Output for CB
P
O
= 4W, 50MHz
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈭払ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector鈭扙mitter Voltage (R
BE
= 10鈩?, V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter鈭払ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Emitter Current, I
E
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鈭?A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鈭?A
Collector Power Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鈭?5擄
to +175擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
DC Current Gain
Collector鈭扙mitter Saturation Voltage
Base鈭扙mitter Voltage
Transition Frequency
Collector Output Capacitance
Output Power
Symbol
I
CBO
h
FE
V
BE
f
T
C
ob
P
O
Test Conditions
V
CB
= 30V, I
E
= 0
V
CE
= 5V, I
C
= 500mA
CE
Min
鈭?/div>
10
鈭?/div>
鈭?/div>
150
鈭?/div>
4
Typ
鈭?/div>
30
鈭?/div>
鈭?/div>
300
25
5
Max
10
140
1.0
1.2
鈭?/div>
50
鈭?/div>
Unit
碌A
V
V
MHz
pF
W
V
CE(sat)
I
C
= 500mA, I
B
= 100mA
= 5V, I
C
= 500mA
V
CE
= 10V, I
E
=
鈭?00mA
V
BE
= 10V, I
E
= 0, f = 1MHz
V
CC
= 12V, f = 50MHz,
P
in
= 0.4W,
畏
= 60%
NTE224 產品屬性
NTE
置換半導體
否
1
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