NTE222
Field Effect Transistor
Dual Gate N鈥揅hannel MOSFET
Absolute Maximum Ratings:
Drain鈥揝ource Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain鈥揋ate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Reverse Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0mA
Forward Gate Current, I
GF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/擄C
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Lead Temperature (During Soldering), T
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Drain鈥揝ource Breakdown Voltage
Gate 1鈥揝ource Breakdown Voltage
Gate 2鈥揝ource Breakdown Voltage
Gate 1 Leakage Current
Gate 2 Leakage Current
Gate 1 to Source Cutoff Voltage
Gate 2 to Source Cutoff Voltage
ON Characteristics
(Note 2)
Zero鈥揋ate鈥揤oltage Drain Current
Small鈥揝ignal Characteristics
Forward Transfer Admittance
|Y
fs
|
V
DS
= 15V, V
G2S
= 4V, V
G1S
= 0V,
f = 1kHz, Note 3
10
鈥?/div>
22
mmhos
I
DSS
V
DS
= 15V, V
G2S
= 4V, V
G1S
= 0V
6
鈥?/div>
30
mA
V
(BR)DSX
I
D
= 10碌A(chǔ), V
G1
= V
G2
= 鈥?V
25
鹵6
鹵6
鈥?/div>
鈥?/div>
鈥?.5
鈥?.2
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鹵30
鹵30
鹵10
鹵10
鈥?.0
鈥?.0
V
V
V
nA
nA
V
V
V
(BR)G1SO
I
G1
=
鹵10mA,
Note 1
V
(BR)G2SO
I
G2
=
鹵10mA,
Note 1
I
G1SS
I
G2SS
V
G1S(off)
V
G2S(off)
V
G1S
=
鹵5V,
V
G2S
= V
DS
= 0
V
G2S
=
鹵5V,
V
G1S
= V
DS
= 0
V
DS
= 15V, V
G2S
= 4V, I
D
= 20碌A(chǔ)
V
DS
= 15V, V
G1S
= 0V, I
D
= 20碌A(chǔ)
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. All gated breakdown voltages are measured while the device is conducting rated gate cur-
rent. This insures that the gate voltage limiting network is functioning properly.
Note 2. Pulse Test: Pulse Width = 30碌s, Duty Cycle
鈮?/div>
2%.
Note 3. This parameter must be measured with bias voltages applied for less than five (5) seconds
to avoid overheating.
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