NTE221
MOSFET
Dual Gate, N鈥揅hannel for
VHF TV Receivers Applications
Description:
The NTE221 is an N鈥揷hannel depletion type, dual鈥搃nsulated gate, field鈥揺ffect transistor that utilizes
MOS construction. This device has characteristics which makes it highly desirable for use in RF鈥揳m-
plifier applications.
Features:
D
Extremely Low Feedback Capacitance
D
High Power Gain
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Drain鈥搕o鈥揝ource Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +20V
Gate 1鈥搕o鈥揝ource Voltage, V
G1S
Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1V to 鈥?V
Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V to 鈥?V
Gate 2鈥搕o鈥揝ource Voltage, V
G2S
Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?V to 40% of V
DS
Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?V to +20V
Drain鈥搕o鈥揋ate Voltage, V
DG1
or V
DG2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Pulsed Drain Current (Note 1), I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Transistor Dissipation (T
A
= +25擄C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Linearly Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/擄C
Operating Ambient Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Lead Temperature (During Soldering, 1/32鈥?from seating surface, 10sec max), T
L
. . . . . . . . +265擄C
Note 1. Pulse test: Pulse Width
鈮?/div>
20ms, Duty Cycle
鈮?/div>
15%.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Gate 1鈥搕o鈥揝ource Cutoff Voltage
Gate 2鈥搕o鈥揝ource Cutoff Voltage
Gate 1 Leakage Current
Gate 2 Leakage Current
Symbol
Test Conditions
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?
鈥?
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
1
1
Unit
V
V
nA
nA
V
G1S
(off) V
DS
= 15V, V
G2S
= 4V, I
D
= 200mA
V
G2S
(off) V
DS
= 15V, V
G1S
= 0, I
D
= 200mA
I
G1SS
I
G2SS
V
G1S
= 20V, V
G2S
= 0, V
DS
= 0
V
G2S
= 20V, V
G1S
= 0, V
DS
= 0
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