NTE218
Silicon PNP Transistor
Audio Power Output
Description:
The NTE218 is ideal for use as a driver, switch and medium鈥損ower amplifier applications. This device
features:
Features:
D
Low Saturation Voltage 鈥?0.6V
CE
(sat) @ I
C
= 1A
D
High Gain Characteristics 鈥?h
FE
@ I
C
= 250mA: 30鈥?00
D
Excellent Safe Area Limits
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector鈥揃ase Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter鈥揃ase Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.A
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Derate above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.143W/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Note 1 Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%.
Electrical Characteristics:
(T
C
= +25擄C unless otherwise sepcified)
Parameter
OFF Characteristics
Colector鈥揈mitter Sustaining Voltage
Emitter Cutoff Current
Collector Cutoff Current
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
I
EBO
I
CEX
I
CEO
I
CBO
V
EB
= 7V
V
CE
= 80V, V
BE(off)
= 1.5V
V
CE
= 60V, V
BE(off)
= 1.5V, T
C
= +150擄C
V
CE
= 60V, I
B
= 0
V
CB
= 80V, I
E
= 0
80
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.5
100
1.0
1.0
100
V
mA
碌A(chǔ)
mA
mA
碌A(chǔ)
Symbol
Test Conditions
Min
Typ
Max
Unit
NTE218 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
NTE218相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Silicon Complementary Transistors High Power, Low Collector ...
NTE
-
英文版
Silicon Complementary Transistors General Purpose Output & D...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 75V; Transistor Polarity:NPN; Colle...
NTE Electronics
-
英文版
Silicon Complementary Transistors General Purpose Output & D...
NTE
-
英文版
Germanium PNP Transistor High Power, High Gain Amplifier
NTE
-
英文版
Silicon NPN Transistor Darlington Driver
NTE
-
英文版
Silicon NPN Transistor Darlington Driver
NTE
-
英文版
Silicon NPN Transistor High Speed Switch, Core Driver
NTE
-
英文版
Silicon PNP Transistor Audio Power Output
NTE
-
英文版
Transistor; PNP; 80 V; 80 V; 7 V; 4 A (Continuous), 10 A (Pe...
NTE Electronics
-
英文版
POWER TRANSISTOR, PNP, -60V, TO-3; Transistor Polarity:PNP; ...
NTE Electronics
-
英文版
MOSFET Dual Gate, N-Channel for VHF TV Receivers Application...
NTE
-
英文版
Field Effect Transistor Dual Gate N-Channel MOSFET
NTE
-
英文版
MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain...
NTE Electronics
-
英文版
Silicon NPN Transistor Final RF Power Output for CB PO = 4W,...
NTE
-
英文版
Silicon NPN Transistor Linear Amplifier and High Speed Switc...
NTE
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE
-
英文版
Silicon NPN Transistor High Voltage Amp, Video Output
NTE
-
英文版
Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp
NTE
-
英文版
Silicon Controlled Rectifier (SCR) TV Deflection Circuit
NTE
1
2
