NTE215
Silicon NPN Transistor
Darlington Driver
Description:
The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications in-
clude motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
Features:
D
High DC Current Gain
D
Large Current Capacity and Wide ASO
D
Low Saturation Voltage
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Collector to Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter to Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Dissipation (T
A
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Collector Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain鈥揃andwidth Product
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Turn鈥揙n Time
Storage Time
Fall Time
Symbol
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)
V
BE(sat)
V
(BR)CBO
t
on
t
stg
t
f
Test Conditions
V
CB
= 80V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 4A
V
CE
= 5V, I
C
= 4A
I
C
= 4A, I
B
= 8mA
I
C
= 4A, I
B
= 8mA
I
C
= 5mA, I
E
= 0
V
CC
= 50V, V
BE
= 鈥?V,
500I
B1
= 鈥?00I
B2
= I
C
= 4A,
PW = 50碌s, Duty Cycle
鈮?/div>
1%
Min
鈥?/div>
鈥?/div>
1500
鈥?/div>
鈥?/div>
鈥?/div>
110
100
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
4000
20
0.9
鈥?/div>
鈥?/div>
鈥?/div>
0.6
4.8
1.6
Max Unit
0.1
3.0
鈥?/div>
鈥?/div>
1.5
2.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
MHz
V
V
V
V
碌s
碌s
碌s
mA
mA
V
(BR)CEO
I
C
= 50mA, R
BE
=
鈭?/div>
next
NTE215 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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