The NTE2114 1024鈥搘ord 4鈥揵it static random access memory is fabricated using N鈥揷hannel silicon鈥?/div>
gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for
operation. The data is read out nondestructively and has the same polarity as the input data. Com-
mon input/output pins are provided.
The separate chip select input (CS) allows easy memory expansion by OR鈥搕ying individual devices
to a data bus.
Features
D
All Inputs and Outputs Directly TTL Compatible
D
Static Operation: No Clocks or Refreshing Required
D
Low Power: 225mW Typ
D
High Speed: Down to 300ns Access Time
D
TRI鈥揝TATE Output for Bus interface
D
Common Data In and Data Out Pins
D
Single 5V Supply
D
Standard 18鈥揕ead DIP Package
Absolute Maximum Ratings:
Voltage at Any Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?.5V to +7V
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 10sec), T
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300擄C
Recommended Operating Conditions:
Parameter
Supply Voltage
Ambient temperature
Symbol
V
CC
T
A
Test Conditions
Min
4.75
0
Max
5.25
+70
Units
V
擄C
1
2
3
4
