NTE2023
Integrated Circuit
General Purpose, High Current
7鈥揝egment Display Driver
Description:
The NTE2023 is a general purpose high current transistor array in a 16鈥揕ead DIP type package com-
prised of seven high current silicon NPN transistor on a common monolithic substrate. It is connected
in a common鈥揷ollector configuration.
Absolute Maximum Ratings:
Power Dissipation (Any One Transistor), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Ambient Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +85擄C
Individual Transistor Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector鈥揝ubstrate Voltage, V
CIO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Note 1. The collector of each transistor in the NTE2023 is isolated from the substrate by an integral
diode. The substrate must be connected to a voltage which is more negative than any collec-
tor voltage so as to maintain isolation between transistors, and to provide normal transistor
action. Undesired coupling between transistors is avoided by maintaining the substrate (5)
at either DC or signal (AC) ground. An appropriate bypass capacitor can be used to establish
a signal ground.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揈mitter Breakdown Voltage
Collector鈥揝ubstrate Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Forward Current Transfer Ratio
Symbol
Test Conditions
Min
20
20
16
5
30
40
Typ
80
80
40
7
80
85
Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Unit
V
V
V
V
V
(BR)CES
I
C
= 500碌A
V
(BR)CIE
I
CI
= 500碌A
V
(BR)CEO
I
C
= 1mA
V
(BR)EBO
I
C
= 500碌A
h
FE
V
CE
= 0.5V, I
C
= 30mA
V
CE
= 0.8V, I
C
= 50mA
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