NTE2021 & NTE2022
Integrated Circuit
8鈥揇igit/Segment Fluorescent Display Driver
Description:
The NTE2021 and NTE2022 consist of eight NPN Darlington output stages and the associated com-
mon鈥揺mitter input stages in an 18鈥揕ead DIP type package. These devices are designed to interface
between low鈥搇evel digital logic and vacuum fluorescent displays. They are capable of driving the dig-
its and/or segments of these displays and are designed to permit all outputs to be activated simulta-
neously. Pulldown resistors are incorporated into each output and no external components are re-
quired for most fluorescent displays.
The NTE2020 is compatible with TTL, Schottky TTL, DTL and 5V CMOS. The NTE2021 device is
intended for use with MOS (PMOS & CMOS) logic operating from supply voltages of 6V to 15V.
Features:
D
Digit or Segment Drivers
D
Low Input Current
D
Integral Output Pull鈥揇own Resistors
D
Low Power
D
Reliable Monolithic Construction
D
High Output Breakdown Voltage
Absolute Maximum Ratings:
(T
A
= +25擄C, Note 1)
Supply Voltage, V
BB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85V
Input Voltage, V
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Output Current, I
OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0mA
Allowable Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/擄C
Operating Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +85擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. Voltages are with reference to GND unless otherwise specified
Recommended Operating Conditions:
Parameter
Supply Voltage
Input ON Voltage
NTE2021
NTE2022
Output ON Current
I
OUT
Symbol
V
BB
V
IN
2.4
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
15
15
鈥?5
V
V
mA
Test Conditions
Min
5
Typ
鈥?/div>
Max
70
Unit
V
Note 2. Positive (negative) current is defined as going into (coming out of) the specified device pin.
next
NTE2021相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Silicon Complementary Transistors High Power, Low Collector ...
NTE
-
英文版
Silicon Complementary Transistors General Purpose Output & D...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 75V; Transistor Polarity:NPN; Colle...
NTE Electronics
-
英文版
Silicon Complementary Transistors General Purpose Output & D...
NTE
-
英文版
Germanium PNP Transistor High Power, High Gain Amplifier
NTE
-
英文版
Silicon NPN Transistor Darlington Driver
NTE
-
英文版
Silicon NPN Transistor Darlington Driver
NTE
-
英文版
Silicon NPN Transistor High Speed Switch, Core Driver
NTE
-
英文版
Silicon PNP Transistor Audio Power Output
NTE
-
英文版
Transistor; PNP; 80 V; 80 V; 7 V; 4 A (Continuous), 10 A (Pe...
NTE Electronics
-
英文版
POWER TRANSISTOR, PNP, -60V, TO-3; Transistor Polarity:PNP; ...
NTE Electronics
-
英文版
MOSFET Dual Gate, N-Channel for VHF TV Receivers Application...
NTE
-
英文版
Field Effect Transistor Dual Gate N-Channel MOSFET
NTE
-
英文版
MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain...
NTE Electronics
-
英文版
Silicon NPN Transistor Final RF Power Output for CB PO = 4W,...
NTE
-
英文版
Silicon NPN Transistor Linear Amplifier and High Speed Switc...
NTE
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE
-
英文版
Silicon NPN Transistor High Voltage Amp, Video Output
NTE
-
英文版
Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp
NTE
-
英文版
Silicon Controlled Rectifier (SCR) TV Deflection Circuit
NTE