NTE192 (NPN) & NTE193 (PNP)
NTE192A (NPN) & NTE193A (PNP)
Silicon Complementary Transistors
Audio Power Output
Description:
NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary
transistors in a TO92HS type package designed for use in general purpose industrial circuits. These
devices are especially suited for high level linear amplifiers or medium speed switching circuits in
industrial control applications.
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current (Note 1), I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (T
C
= +25擄C, Note 1), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2mW/擄C
Total Power Dissipation (T
A
= +25擄C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.47mW/擄C
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 1/16鈥?/div>
鹵1/32鈥?/div>
from case for 10sec max), T
L
. . . . . . . . +260擄C
Note 1. Determined from power limitations due to saturation voltage at this current.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
DC Characteristics
Collector Cutoff Current
Emitter Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
I
CBO
I
EBO
V
CB
= 50V
V
CB
= 50V, T
A
= +100擄C
V
EB
= 5V
V
CE(sat)
I
B
= 3mA, I
C
= 50mA
V
BE(sat)
I
B
= 3mA, I
C
= 50mA
h
FE
V
CE
= 4.5V, I
C
= 2mA
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
180
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.1
15
0.1
0.30
0.85
540
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
V
Symbol
Test Conditions
Min
Typ
Max
Unit
next
NTE192 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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