NTE1850
Integrated Circuit
Dual 12W/Channel Audio Power Amplifier
Description:
The NTE1850 is a dual Hi鈥揊i audio power amplifier in a 9鈥揕ead SIP type package designed for
mains鈥揻ed applications such as stereo TV sound and stereo radio. The circuit is optimal for symmetri-
cal power supplies but is also well suited to asymmetrical power supply systems. An output power
of 2 x 12W (THD = 0.5%) can be delivered into an 8鈩?load with a symmetrical power supply of
鹵16V.
The gain is fixed internally at 30dB, but can be changed externally if required. Internal gain fixing gives
low gain spread and very good balance between the amplifiers (0.2dB).
A special feature is an input mute circuit which provides suppression of unwanted signals at the inputs
during switching on and off. This circuit disconnects the non鈥搃nverting inputs when the supply voltage
is below
鹵6V,
while allowing the amplifiers to remain in their DC operating condition.
Two thermal protection circuits are provided, one monitors the average junction temperature and the other
the instantaneous temperature of the power transistors. Both protection circuits activate at +150擄C, allow-
ing safe operation to a maximum junction temperature of +150擄C without added distortion.
Applications:
Features:
D
Few External Components Required
D
Stereo
D
Input Muted During Power ON/OFF
D
TV Sound
D
Low Offset Voltage Between Output and GND
D
Radio
D
Excellent Gain Balance Between Channels
D
Short鈥揅ircuit Protected
D
Thermally Protected
Absolute Maximum Ratings:
Supply Voltage (Pin5 and Pin7), V
CC
= V
5
,
7鈥?
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Non鈥揜epetitive Peak Output Current (Pin4 and Pin6), I
OSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total Power Dissipation (T
A
= +25擄C, Infinite Heatsink), P
TOT
. . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5擄C/W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Short鈥揅ircuit Time (Outputs Short鈥揅ircuited to GND), t
SC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1Hr
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25擄C/W
1
2
3
