NTE182 (NPN) & NTE183 (PNP)
Silicon Complementary Transistors
General Purpose Amplifier, Switch
Description:
The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use
in general purpose amplifier and switching applications.
Features:
D
DC Current Gain Specified to 10A
D
High Current Gain鈥揃andwidth Product: f
T
= 2MHz (Min) @ I
C
= 500mA
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector鈥揃ase Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter鈥揃ase Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.72W/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39擄C/W
Electrical Characteristics:
(T
C
=+25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Sustaining Voltage
Collector Cutoff Current
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Note 1
I
CEO
I
CEX
V
CE
= 30V, I
B
= 0
V
CE
= 70V, V
BE(off)
= 1.5V
V
CE
= 70V, V
BE(off)
= 1.5V,
T
C
= +150擄C
I
CBO
Emitter Cutoff Current
I
EBO
V
CB
= 70V, I
E
= 0
V
CB
= 70V, I
E
= 0, T
C
= +150擄C
V
BE
= 5V, I
C
= 0
60
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700
1.0
5.0
1.0
10
5.0
V
碌A(chǔ)
mA
mA
mA
mA
mA
Symbol
Test Conditions
Min
Typ Max Unit
Note 1. Pulse Test: Pulse Width
鈮?/div>
300碌s. Duty Cycle
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