NTE179
Germanium PNP Transistor
Audio Power Amplifier, High Current Switch
Description:
The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high鈥揷urrent switch-
ing applications requiring low saturation voltages, fast switching times, and good safe operating
conditions.
Features:
D
Low Collector鈥揈mitter Saturation Voltage:
V
CE(sat)
= 0.5V (Max) @ I
C
= 5A
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector鈥揃ase Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Emitter鈥揃ase Volatge, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106W
Derate above +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W/擄C
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to + 110擄C
Storage Junction Temperature, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to + 110擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8擄C/W
Electrical Characteristics:
(T
A
= +25擄C unless otherwise noted)
Parameter
OFF Characteristics
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector鈥揈mitter Sustaining Voltage
Collector Cutoff Current
Collector鈥揈mitter Cutoff Current
V
(BR)CBO
I
C
= 100mA, I
B
= 0
V
(BR)EBO
I
E
= 100mA, I
C
= 0
V
CE(sus)
I
CBO
I
CEX
I
CER
I
C
= 5A
V
CB
= 2V, I
E
= 0
V
CE
= 90V, V
BE(off)
= 0.2V
V
CE
= 50V, R
EB
= 100鈩?/div>
40
2
40
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
200
20
10
V
V
V
碌A(chǔ)
mA
mA
Symbol
Test Conditions
Min
Typ
Max Unit
NTE179相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier
NTE
-
英文版
Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier
NTE [NTE E...
-
英文版
Silicon Complementary Transistors High Current Amplifier
NTE
-
英文版
Silicon Complementary Transistors High Current Amplifier
NTE [NTE E...
-
英文版
Silicon NPN Transistor Low Voltage Output Amp
NTE
-
英文版
Silicon NPN Transistor Low Voltage Output Amp
NTE [NTE E...
-
英文版
Silicon PNP Transistor High Power, Low Frequency Driver
NTE
-
英文版
Silicon PNP Transistor High Power, Low Frequency Driver
NTE [NTE E...
-
英文版
Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC
NTE
-
英文版
Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC
NTE [NTE E...
-
英文版
Germanium Complementary Transistors Oscillator, Mixer for AM...
NTE
-
英文版
Germanium Complementary Transistors Oscillator, Mixer for AM...
NTE [NTE E...
-
英文版
RF TRANSISTOR, NPN, 25V; Transistor Polarity:NPN; Collector ...
NTE Electronics
-
英文版
Germanium Complementary Transistors Power Output, Driver
NTE
-
英文版
Germanium Complementary Transistors Power Output, Driver
NTE [NTE E...
-
英文版
BIPOLAR TRANSISTOR, NPN, 24V; Transistor Polarity:NPN; Colle...
NTE Electronics
-
英文版
Germanium PNP Transistor Audio Frequency Power Amplifier
NTE
-
英文版
Germanium PNP Transistor Audio Frequency Power Amplifier
NTE [NTE E...
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE [NTE E...
1
2
