NTE177
General Purpose Silicon Rectifier
Description:
The NTE177 is a general purpose silicon rectifier in a DO35 case designed for switching applications.
Absolute Maximum Ratings:
Continuous Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Peak Repetitive Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Forward DC Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Average Forward Current, I
F(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Repetitive Peak Forward Current, I
FRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mA
Non鈥揜epetitive Peak Forward Current, I
FSM
(t < 1s, T
J
= +25擄C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
(t =1碌s, T
J
= +25擄C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (T
A
= +25擄C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Maximum Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . +375擄C
Electrical Characteristics:
(T
J
= +25擄C unless otherwise specified)
Parameter
Instantaneous Forward Voltage Drop
Reverse Current
Breakdown Voltage
Diode Capacitance
Differential Forward Resistance
Reverse Recovery Time
Symbol
V
F
I
R
V
(BR)R
C
d
r
i
t
r
Test Conditions
I
F
= 100mA
I
F
= 200mA
V
R
= 150V
V
R
= 150V, T
J
= +150擄C
I
R
= 100碌A(chǔ)
V
R
= 0, f = 1MHz
I
F
= 10mA
When switched from
I
F
= 30mA to I
R
= 30mA,
R
L
= 100鈩? measured at I
R
= 3mA
Min Typ Max Unit
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
200
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.5
5
鈥?/div>
1.0
1.25
100
100
鈥?/div>
5.0
鈥?/div>
50
V
V
nA
碌A(chǔ)
V
pF
next
NTE177 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細信息
1
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