NTE1680
Integrated Circuit
High Speed, 6 Diode Array, Common Anode
Description:
The NTE1680 is a common anode monolithic array of high speed switching diodes in a 7鈥揕ead SIP
type package.
Features:
D
High Speed Switching Time: t
rr
= 4.0ns Typ.
D
Low Capacitance: C
t
= 5.0pf TYP.
D
Small Size Enables High Density Mounting
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise spcified)
Peak Reverse Voltage, V
RM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Peak Forward Surge Current (Per Unit), I
F
surge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Forward Current (1碌s, Per Unit), I
FM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Average Rectified Current (Per Unit), I
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation (Per Package), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to + 125擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Forward Voltage Drop
Reverse Current
Terminal Capacitance (Per Unit)
Reverse Recovery Time
Symbol
V
F
I
R
C
t
t
rr
Test Conditions
I
F
= 30mA
V
R
= 30V
V
R
= 0, f = 1.0MHz
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
0.8
0.005
5.0
4.0
Max
1.0
0.1
8.0
8.0
Unit
V
碌A(chǔ)
pF
ns
1
2
