NTE164
Silicon NPN Transistor
TV Vertical Output
Description:
The NTE164 is a high voltage silicon NPN transistor in a TO3 type package designed for color TV
vertical output applications.
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector鈥揈mitter Voltage, V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Maximum Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Transition Frequency
Capacitance
Fall Time
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 15V, I
C
= 2A
Min
鈥?/div>
鈥?/div>
5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
20
5.0
鈥?/div>
3
95
0.5
Max Unit
10
5
鈥?/div>
8.5
1.5
鈥?/div>
鈥?/div>
1.0
V
V
MHz
pF
碌s
碌A(chǔ)
碌A(chǔ)
V
CE(sat)
I
C
= 2A, I
B
= 0.6A
V
BE(sat)
I
C
= 2A, I
B
= 0.6A
f
T
C
ob
t
f
V
CE
= 10V, I
C
= 0.1A
V
CB
= 10V, I
E
= 0, f = 1MHz
I
CP
= 2A, I
B1
= 0.6A
NTE164 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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