NTE162
Silicon NPN Transistor
TV Vertical Deflection
Description:
The NTE162 is an NPN transistor in a TO3 type case designed for medium鈥搕o鈥揾igh voltage inverters,
converters, regulators, and switching circuits.
Features:
D
High Voltage: V
CEX
= 400V
D
Gain Specified to 3.5A
D
High Frequency Response to 2.5MHz
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector鈥揃ase Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1擄C/W
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Sustaining Voltage
Collector Cutoff Current
V
(BR)CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
I
CEX
V
CE
= 400V, V
EB(off)
= 1.5V
V
CE
= 400V, V
EB(off)
= 1.5V,
T
C
= +125擄C
Emitter Cutoff Current
I
EBO
V
BE
= 5V, I
C
= 0
325
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.5
1.0
2.0
V
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max Unit
Note 1. Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
next
NTE162相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier
NTE
-
英文版
Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier
NTE [NTE E...
-
英文版
Silicon Complementary Transistors High Current Amplifier
NTE
-
英文版
Silicon Complementary Transistors High Current Amplifier
NTE [NTE E...
-
英文版
Silicon NPN Transistor Low Voltage Output Amp
NTE
-
英文版
Silicon NPN Transistor Low Voltage Output Amp
NTE [NTE E...
-
英文版
Silicon PNP Transistor High Power, Low Frequency Driver
NTE
-
英文版
Silicon PNP Transistor High Power, Low Frequency Driver
NTE [NTE E...
-
英文版
Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC
NTE
-
英文版
Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC
NTE [NTE E...
-
英文版
Germanium Complementary Transistors Oscillator, Mixer for AM...
NTE
-
英文版
Germanium Complementary Transistors Oscillator, Mixer for AM...
NTE [NTE E...
-
英文版
RF TRANSISTOR, NPN, 25V; Transistor Polarity:NPN; Collector ...
NTE Electronics
-
英文版
Germanium Complementary Transistors Power Output, Driver
NTE
-
英文版
Germanium Complementary Transistors Power Output, Driver
NTE [NTE E...
-
英文版
BIPOLAR TRANSISTOR, NPN, 24V; Transistor Polarity:NPN; Colle...
NTE Electronics
-
英文版
Germanium PNP Transistor Audio Frequency Power Amplifier
NTE
-
英文版
Germanium PNP Transistor Audio Frequency Power Amplifier
NTE [NTE E...
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE [NTE E...