NTE16006
Silicon NPN Transistor
Low Frequency Output Amp
w
/High Current Gain
Features:
D
High DC Current Gain
D
Low Collector鈥揈mitter Saturation Voltage
D
An M type mold package that allows easy manual and automatic insertion. Can be firmly
mounted flush to PCB surface
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation (Note 1), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5
擄
to +150擄C
Note 1. Copper foil on PCB against Collector: 1.7mm thick, 1cm
2
in area.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cut鈥揙ff Current
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
DC Current Gain
Collector鈥揈mitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test Conditions
V
CB
= 15V, I
E
= 0
V
CE
= 15V, I
B
= 0
I
C
= 10碌A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 10V, I
C
= 150mA, Note 2
I
C
= 500mA, I
B
= 50mA, Note 2
V
CB
= 20V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10 V, I
E
= 0, f = 1MHz
Min
鈥?/div>
鈥?/div>
20
20
15
1000
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
55
11
Max
1
10
鈥?/div>
鈥?/div>
鈥?/div>
2500
0.4
鈥?/div>
15
Unit
碌A
碌A
V
V
V
鈥?/div>
V
MHz
pF
Note 2. Pulse Measurement
NTE16006 產(chǎn)品屬性
NTE
否
1
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