NTE16003
Silicon NPN Transistor
RF Power Output, P
O
= 7W, 175MHz
Description:
The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode
design. This feature together with a heavily diffused base matrix located between the individual emit-
ters results in high RF current handling capability, high power gain, low base resistance, and low out-
put capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multipli-
er circuits and is specifically designed for operation in the VHF鈥揢HF region.
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I
C
(max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66.4mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter鈥揃ase Breakdown Voltage
Symbol
I
CEO
Test Conditions
V
CE
= 30V, I
B
= 0
Min
鈥?/div>
65
4
40
65
鈥?/div>
鈥?/div>
3
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
500
鈥?/div>
Max
0.1
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
鈥?/div>
鈥?/div>
Unit
mA
V
V
V
V
pF
MHz
W
Collector鈥揃ase Breakdown Voltage V
(BR)CBO
I
C
= 0.1mA, I
E
= 0
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
Collector鈥揈mitter Breakdown Voltage V
(BR)CEO
I
C
= 0 to 200mA, I
B
= 0, Note 1
Collector鈥揈mitter Breakdown Voltage V
(BR)CEV
I
C
= 0 to 200mA, V
BE
= 鈥?.5V,
Note 1
Output Capacitance
Current Gain鈥揃andwidth Product
RF Power Output, Class C,
Unneutralized
C
ob
f
T
P
out
V
CB
= 30V, I
C
= 0, f = 1MHz
V
CE
= 28V, I
C
= 150mA,
f = 100MHz
f = 175MHz, V
CE
= 28V,
P
IN
= 1W
Note 1. Pulsed through 25mH inductor, Duty Factor = 50%
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