NTE16001
Silicon NPN Transistor
Video IF Amp
Features:
D
High Transistion Frequency
D
Good Linearity of DC Current Gain
D
An M Type Mold package that Allows Easy Manual and Automatic Insertion. Can be Firmly
Mounted Flush to PC Board Surface.
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
DC Current Gain
Collector鈥揈mitter Saturation Volatge
Transistion Frequency
Small鈥揝ignal Reverse Transfer Capaci-
tance
Power Gain
Symbol
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
re
PG
Test Conditions
V
CE
= 20V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 10V, I
E
= 鈥?0mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= 鈥?0mA, f =
100MHz
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 58MHz
Min
鈥?/div>
45
35
4
20
鈥?/div>
300
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
鈥?/div>
500
鈥?/div>
18
Max
10
鈥?/div>
鈥?/div>
鈥?/div>
100
0.5
鈥?/div>
1.5
鈥?/div>
V
MHz
pF
dB
Unit
碌A(chǔ)
V
V
V
NTE16001 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
NTE16001相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier
NTE
-
英文版
Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier
NTE [NTE E...
-
英文版
Silicon Complementary Transistors High Current Amplifier
NTE
-
英文版
Silicon Complementary Transistors High Current Amplifier
NTE [NTE E...
-
英文版
Silicon NPN Transistor Low Voltage Output Amp
NTE
-
英文版
Silicon NPN Transistor Low Voltage Output Amp
NTE [NTE E...
-
英文版
Silicon PNP Transistor High Power, Low Frequency Driver
NTE
-
英文版
Silicon PNP Transistor High Power, Low Frequency Driver
NTE [NTE E...
-
英文版
Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC
NTE
-
英文版
Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC
NTE [NTE E...
-
英文版
Germanium Complementary Transistors Oscillator, Mixer for AM...
NTE
-
英文版
Germanium Complementary Transistors Oscillator, Mixer for AM...
NTE [NTE E...
-
英文版
RF TRANSISTOR, NPN, 25V; Transistor Polarity:NPN; Collector ...
NTE Electronics
-
英文版
Germanium Complementary Transistors Power Output, Driver
NTE
-
英文版
Germanium Complementary Transistors Power Output, Driver
NTE [NTE E...
-
英文版
BIPOLAR TRANSISTOR, NPN, 24V; Transistor Polarity:NPN; Colle...
NTE Electronics
-
英文版
Germanium PNP Transistor Audio Frequency Power Amplifier
NTE
-
英文版
Germanium PNP Transistor Audio Frequency Power Amplifier
NTE [NTE E...
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE [NTE E...
1
2
3
4
