NTE15
Silicon NPN Transistor
VHF Amp, Mixer, Oscillator, UHF OSC
Features:
D
High Transition Frequency: f
T
= 1.1GHz
D
Low Base Resistance and High Gain
D
Excellent Noise Characteristics
Applications:
D
VHF Mixers and Oscillators
D
UHF Oscillators
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Collector Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揈mitter Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Transition Frequency
Output Capacitance
Collector鈥揃ase Time Constant
Symbol
Test Conditions
Min
19
30
5
鈥?/div>
鈥?/div>
39
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ Max Unit
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.1
鈥?/div>
鈥?/div>
鈥?/div>
0.5
0.5
鈥?/div>
鈥?/div>
V
V
V
碌A(chǔ)
碌A(chǔ)
鈥?/div>
V
V
(BR)CEO
I
C
= 1mA
V
(BR)CBO
I
C
= 50碌A(chǔ)
V
(BR)EBO
I
E
= 50碌A(chǔ)
I
CBO
I
EBO
h
FE
f
T
C
ob
C
dbb
V
CB
= 20V
V
EB
= 3V
V
CE
= 10V, I
C
= 5mA
V
CE
= 5V, I
E
= 10mA
V
CB
= 10V, f = 1MHz
I
C
= 10mA, V
CB
= 5V,
f = 31.8MHz
V
CE(sat)
I
C
= 10mA, I
B
= 1mA
600 1100 MHz
1.2
10
1.5
15
pF
pS
NTE15 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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