NTE158
Germanium PNP Transistor
Audio Power Amplifier
Description:
The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low鈥損ower,
large signal audio applications.
Absolute Maximum Ratings:
(T
A
= +25擄C)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
Collector鈥揈mitter Voltage (R
BE
鈮?/div>
500鈩?, V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Power Dissipation (T
A
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 550mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3mW/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +90擄C
Lead Temperature (During Soldering, 1/16鈥?/div>
鹵1/32鈥?/div>
from case for 5sec), T
L
. . . . . . . . . . . . . . +245擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Base鈥揈mitter Voltage
Forward Current Transfer Cutoff
Frequency
Output Capacitance
Symbol
Test Conditions
Min
32
10
鈥?/div>
鈥?/div>
60
280
10
V
CB
= 鈥?V, I
E
= 0 @ 0.45mc
80
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
90
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
10
500
175
380
20
105
mV
kc
pF
Unit
V
V
碌A(chǔ)
碌A(chǔ)
V
(BR)CBO
I
C
= 200碌A(chǔ), I
E
= 0
V
(BR)EBO
I
E
= 200碌A(chǔ), I
C
= 0
I
CBO
I
EBO
h
FE
V
BE
f
hfe
C
ob
V
CB
= 鈥?0V, I
E
= 0
V
EB
= 鈥?V, T
J
= +75擄C
V
CB
= 1V, I
C
= 300mA
V
CE
= 1V, I
C
= 300mA
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